Silicon dioxide, nanopowder, 10-20 nm particle size (BET), 99.5% trace metals basis – Sigma-Aldrich
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Sigma-Aldrich
Synonyms
Silica, Nanosilica, Silicon dioxide
Cas No.
7631-86-9
General Description
The refractive index of silica nanoparticles is similar to polymeric coatings, so it finds several applications in the preparation of nanocomposites. Properties such as, thermal resistance, electrical and mechanical are enhanced. Silica nanoparticles find uses in various fields of catalysts, pigment stabilisation, electronics and sensors.
Application
Silica nanoparticles have been used :
- To study the nonlinear optical properties of SiO2 nanocomposites in weak optical fields.
- As a nanoadditive in nanocomposite calcium alginate fibres.
- As a dispersant in liquid polymethylsiloxane to exhibit unique optical nonlinearity in low-intensity visible radiation fields.[2]
Silicon, wafer (single side polished) – Sigma-Aldrich
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Sigma-Aldrich
Synonyms
Silicon element
Cas No.
7440-21-3
General Description
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 – 3000 Ωcm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″
Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells, etc. They serve as a substrate for various microelectronic devices.
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Application
Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.: This article addresses the challenges and real-world applications of high-performance silicon anodes in lithium-ion batteries, presenting innovative solutions to enhance their efficiency (Khan et al., 2024).
Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.: This research focuses on strain engineering to improve the fabrication of freestanding perovskite oxides, which are crucial for various high-purity silicon applications in academia (Yun et al., 2024).
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant – Sigma-Aldrich
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Sigma-Aldrich
Synonyms
Silicon element
Cas No.
7440-21-3
General Description
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 – 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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Silicon, wafer (single side polished), <111>, N-type, contains no dopant – Sigma-Aldrich
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Sigma-Aldrich
Synonyms
Silicon element
Cas No.
7440-21-3
General Description
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity >1,000 Ω•cm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″
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Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant – Sigma-Aldrich
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Sigma-Aldrich
Synonyms
Silicon element
Cas No.
7440-21-3
General Description
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 – 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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Silicon, wafer, <111>, P-type – Sigma-Aldrich
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Sigma-Aldrich
Synonyms
Silicon element
Cas No.
7440-21-3
General Description
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 – 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
We are committed to bringing you Greener Alternative Products, which belong to one of the four categories of greener alternatives. This enabling product has been enhanced for energy efficiency. Click here for more information.
